Profiling of the SiO2 - SiC Interface Using X-ray Photoelectron Spectroscopy

نویسندگان

  • R. N. Ghosh
  • S. Ezhilvalavan
  • B. Golding
  • S. M. Mukhopadhyay
  • N. Mahadev
  • P. Joshi
  • M. K. Das
چکیده

The implementation of SiC based sensors and electronics for operation in chemically harsh, high temperature environments depends on understanding the SiO2/SiC interface in field effect devices. We have developed a technique to fabricate wedge polished samples (angle ~ 1x10 rad) that provides access to the SiO2/SiC interface via a surface sensitive probe such as xray photoelectron spectroscopy (XPS). Lateral scanning along the wedge is equivalent to depth profiling. Spatially resolved XPS images of the O 1s and Si 2p core levels were obtained of the interfacial region. Samples consist of device-quality thermally grown oxides on 4H-SiC single crystal substrates. The C 1s spectrum suggests the presence of a graphitic layer on the nominally bare SiC surface following thermal oxidation.

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تاریخ انتشار 2000